苏州晶歌半导体

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GaAs HBT外延片

外延片

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<p style="margin-top: 5px; margin-bottom: 5px; overflow-wrap: break-word; color: rgb(0, 0, 0); font-family: "sans serif", tahoma, verdana, helvetica; font-size: 12px; white-space: normal; text-indent: 32px; line-height: 18px;">提供6英寸定制化的GaAs HBT外延片：<p style="margin-top: 5px; margin-bottom: 5px; overflow-wrap: break-word; color: rgb(0, 0, 0); font-family: "sans serif", tahoma, verdana, helvetica; font-size: 12px; white-space: normal; text-indent: 32px; line-height: 18px;">（1）增益电阻比（β/Rbs）大范围可调（0.3~0.6），burn-in效应小（<10%）；<p style="margin-top: 5px; margin-bottom: 5px; overflow-wrap: break-word; color: rgb(0, 0, 0); font-family: "sans serif", tahoma, verdana, helvetica; font-size: 12px; white-space: normal; text-indent: 32px; line-height: 18px;">（2）电学性能（β、方阻、电容、击穿电压等）均匀性好于3%，厚度均匀性好于1%；<p style="margin-top: 5px; margin-bottom: 5px; overflow-wrap: break-word; color: rgb(0, 0, 0); font-family: "sans serif", tahoma, verdana, helvetica; font-size: 12px; white-space: normal; text-indent: 32px; line-height: 18px;">（3）颗粒度低、稳定性好、可靠性高；<p style="margin-top: 5px; margin-bottom: 5px; overflow-wrap: break-word; color: rgb(0, 0, 0); font-family: "sans serif", tahoma, verdana, helvetica; font-size: 12px; white-space: normal; text-indent: 32px; line-height: 18px;">（4）量产经验丰富。<img src="http://procfb0be40.pic2.ysjianzhan.cn/upload/GaAsHBT.png" width="500" height="193" border="0" hspace="0" vspace="0" title="" style="width: 500px; height: 193px; margin: 0px; border: 0px solid;"/>
InP HBT外延片

外延片

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提供4英寸定制化的InP/GaAsSb HBT外延片：（1）II型能带排列，电子输运不存在势垒；（2）GaAsSb base掺杂可达1´1020cm-3；（3）高增益电阻比（β/Rbs） 0.05~0.1；（4）集电极电流和基极电流理想因子均接近1；（5）器件电学性能均匀性好于3%。<img src="http://procfb0be40.pic2.ysjianzhan.cn/upload/InPHBT_7upq.png" width="500" height="194" border="0" hspace="0" vspace="0" title="" style="width: 500px; height: 194px; margin: 0px; border: 0px solid; float: left;"/>
pHEMT外延片

外延片

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<p style="margin-top: 5px;margin-bottom: 5px;overflow-wrap: break-word;color: rgb(0, 0, 0);font-family: 'sans serif', tahoma, verdana, helvetica;font-size: 12px;white-space: normal;text-indent: 32px;line-height: 18px">提供6英寸GaAs pHEMT外延片：<p style="margin-top: 5px;margin-bottom: 5px;overflow-wrap: break-word;color: rgb(0, 0, 0);font-family: 'sans serif', tahoma, verdana, helvetica;font-size: 12px;white-space: normal;text-indent: 32px;line-height: 18px">（1）二维电子气浓度：2E12~1E13 cm-2;<p style="margin-top: 5px;margin-bottom: 5px;overflow-wrap: break-word;color: rgb(0, 0, 0);font-family: 'sans serif', tahoma, verdana, helvetica;font-size: 12px;white-space: normal;text-indent: 32px;line-height: 18px">（2）迁移率：6000~8500 cm2/V×s；<p style="margin-top: 5px;margin-bottom: 5px;overflow-wrap: break-word;color: rgb(0, 0, 0);font-family: 'sans serif', tahoma, verdana, helvetica;font-size: 12px;white-space: normal;text-indent: 32px;line-height: 18px">（3）方阻均匀性好于2%，厚度均匀性好于1%；<p style="margin-top: 5px;margin-bottom: 5px;overflow-wrap: break-word;color: rgb(0, 0, 0);font-family: 'sans serif', tahoma, verdana, helvetica;font-size: 12px;white-space: normal;text-indent: 32px;line-height: 18px">（4）界面电荷低，漏电流小。<p class="MsoListParagraph" style="margin-top: 5px;margin-bottom: 5px;margin-left: 72px;overflow-wrap: break-word;color: rgb(0, 0, 0);font-family: 'sans serif', tahoma, verdana, helvetica;font-size: 12px;white-space: normal;line-height: 18px"> <p style="margin-top: 5px;margin-bottom: 5px;margin-left: 32px;overflow-wrap: break-word;color: rgb(0, 0, 0);font-family: 'sans serif', tahoma, verdana, helvetica;font-size: 12px;white-space: normal;line-height: 18px">提供4英寸InP pHEMT外延片：<p style="margin-top: 5px;margin-bottom: 5px;margin-left: 32px;overflow-wrap: break-word;color: rgb(0, 0, 0);font-family: 'sans serif', tahoma, verdana, helvetica;font-size: 12px;white-space: normal;line-height: 18px">（1）二维电子气浓度：1E12~3E12 cm-2;<p style="margin-top: 5px;margin-bottom: 5px;margin-left: 32px;overflow-wrap: break-word;color: rgb(0, 0, 0);font-family: 'sans serif', tahoma, verdana, helvetica;font-size: 12px;white-space: normal;line-height: 18px">（2）迁移率：10000~13000 cm2/V×s；<p style="margin-top: 5px;margin-bottom: 5px;margin-left: 32px;overflow-wrap: break-word;color: rgb(0, 0, 0);font-family: 'sans serif', tahoma, verdana, helvetica;font-size: 12px;white-space: normal;line-height: 18px">（3）方阻均匀性好于2%。
InP PIN外延片

外延片

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<p style="margin-top: 5px; margin-bottom: 5px; margin-left: 32px; overflow-wrap: break-word; color: rgb(0, 0, 0); font-family: "sans serif", tahoma, verdana, helvetica; font-size: 12px; white-space: normal; line-height: 18px;">提供4英寸InGaAs/InP SWIR PD外延片：<p style="margin-top: 5px; margin-bottom: 5px; margin-left: 32px; overflow-wrap: break-word; color: rgb(0, 0, 0); font-family: "sans serif", tahoma, verdana, helvetica; font-size: 12px; white-space: normal; line-height: 18px;">（1）InGaAs本底浓度 <5´1014cm-3，迁移率 >9000cm2/V×s;<p style="margin-top: 5px; margin-bottom: 5px; margin-left: 32px; overflow-wrap: break-word; color: rgb(0, 0, 0); font-family: "sans serif", tahoma, verdana, helvetica; font-size: 12px; white-space: normal; line-height: 18px;">（2）InGaAs波长均匀性 <2nm，厚度均匀性好于1%；<p style="margin-top: 5px; margin-bottom: 5px; margin-left: 32px; overflow-wrap: break-word; color: rgb(0, 0, 0); font-family: "sans serif", tahoma, verdana, helvetica; font-size: 12px; white-space: normal; line-height: 18px;">（3）极好的run-to-run、pocket-to-pocket均匀性。<img src="http://procfb0be40.pic2.ysjianzhan.cn/upload/InPPIN.png" width="500" height="175" border="0" hspace="0" vspace="0" title="" style="width: 500px; height: 175px; margin: 0px; border: 0px solid;"/>
Hall传感器外延片

外延片

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提供各类Hall传感器外延片：（1）GaAs on GaAs： 掺杂浓度1E16~1E17 cm-3，迁移率 5000~6000 cm2/V×s;（2）InAs on GaAs： 掺杂浓度1E16~1E17 cm-3，迁移率 9000~12000 cm2/V×s;（3）InSb on GaAs： 掺杂浓度2E16~3E16 cm-3，迁移率 >30000 cm2/V×s。

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